View RJE0601JPE-00-J3_4989358.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Preliminary Datasheet
RJE0601JPE
Silicon P Channel MOS FET Series Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. REJ03G1906-0200 Rev.2.00 Jun 29, 2010
Features
High endurance capability against to the short circuit. Built-in the over temperature shut-down circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS: 22 m Typ, 27 m Max (VGS = -10 V)
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
D
G 1 2 3
Temperature Sensing Circuit
Gate Resistor
Current Limitation Circuit
Gate Shut-down Circuit
1. Gate 2. Drain (Flange) 3. Source
Latch Circuit
S
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage VGSS Drain current ID Body-drain diode reverse drain current IDR Avalanche current IAP Note 1 Avalanche energy EAR Note 2 Channel dissipation Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25C 2. Tch = 25C, Rg 50 3. It provides by the current limitation lower bound value. Ratings -60 -16 2.5 -40 Note 3 -40 -15 964 50 150 -55 to +150 Unit V V V A A A mJ W C C
REJ03G1906-0200 Rev.2.00 Jun 29, 2010
Page 1 of 6
RJE0601JPE
Preliminary
Typical Operation Characteristics
(Ta = 25C)
Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Notes; 4. Pulse test Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min -3.5 -- -- -- -- -- -- -- -3.5 -40 Typ -- -- -- -- -- -0.8 -0.35 175 -- -60 Max -- -1.2 -100 -50 -1 -- -- -- -12 -- Unit V V A A A mA mA C V A Test Conditions
Vi = -8 V, VDS = 0 Vi = -3.5 V, VDS = 0 Vi = -1.2 V, VDS = 0 Vi = -8 V, VDS = 0 Vi = -3.5 V, VDS = 0 Channel temperature (dv/dt VGS 500 V/ms) VGS = -12 V, VDS = -10 V Note 4
Electrical Characteristics
(Ta = 25C)
Item Drain current Symbol ID1 ID2 ID3 V(BR)DSS V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS VGS(off) |yfs| RDS(on) RDS(on) Coss td(on) tr td(off) tf VDF trr tos1 Min -- -- -40 -60 -16 2.5 -- -- -- -- -- -- -- -2.2 8.4 -- -- -- -- -- -- -- -- -- -- Typ -- -- -60 -- -- -- -- -- -- -- -0.8 -0.35 -- -- 27 26 22 860 12.6 12.5 3.7 2.2 -0.95 100 2.3 Max -40 -10 -- -- -- -- -100 -50 -1 100 -- -- -10 -3.4 -- 45 27 -- -- -- -- -- -- -- -- Unit A mA A V V V A A A A mA mA A V S m m pF s s s s V ns ms Test Conditions VGS = -3.5 V, VDS = -10 V VGS = -1.2 V, VDS = -10 V VGS = -12 V, VDS = -10 V Note 5 ID = -10 mA, VGS = 0 IG = -800 A, VDS = 0 IG = 100 A, VDS = 0 VGS = -8 V, VDS = 0 VGS = -3.5 V, VDS = 0 VGS = -1.2 V, VDS = 0 VGS = 2.4 V, VDS = 0 VGS = -8 V, VDS = 0 VGS = -3.5 V, VDS = 0 VDS = -60 V, VGS = 0 VDS = -10 V, ID = -1 mA ID = -20 A, VDS = -10 V Note 5 ID = -20 A, VGS = -6 V Note 5 ID = -20 A, VGS = -10 V Note 5 VDS = -10 V, VGS = 0, f = 1MHz VGS = -10 V, ID= -20 A, RL = 1.5
Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current
Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down Note 6 operation time
IF = -40 A, VGS = 0 IF = -40 A, VGS = 0 diF/dt = 50 A/s VGS = -5 V, VDD = -16 V
Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition.
REJ03G1906-0200 Rev.2.00 Jun 29, 2010
Page 2 of 6
RJE0601JPE
Preliminary
Main Characteristics
Power vs. Temperature Derating
80 -1000
Maximum Safe Operation Area
Ta = 25C Thermal shut down operation area
Channel Dissipation Pch (W)
Drain Current ID (A)
60
-100
1 m s
40
-10
DC Operation (Tc = 25C) Operation in this area is limited RDS(on)
20
-1
PW = 10 ms
0 0 50 100 150 200
-0.1 -0.1
-1
-10
-100
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
-100 Pulse Test -40
Typical Transfer Characteristics
VDS = -10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
-10 V -50
-8 V -6 V
-30
-5.5 V -5 V -4.5 V VGS = -4 V
-20
Tc = 75C 25C -25C
-10
0
-5
-10
-0 0 -2 -4 -6 -8 -10
Drain to Source Voltage VDS (V) Drain Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (mV)
-2000 Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current
1000 Pulse Test
-1500
Static Drain to Source On State Resistance RDS(on) (m)
100 VGS = -6 V 10 -10 V
-1000
-500
-5 A
ID = -20 A -10 A
0
-2
-4
-6
-8
-10
-12
1 -0.1
-1
-10
-100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1906-0200 Rev.2.00 Jun 29, 2010
Page 3 of 6
RJE0601JPE
Static Drain to Source On State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
50 Pulse Test 40 ID = -20 A -10 A -5 A 100 Tc = -25C 10 25C 1 75C
Preliminary
Forward Transfer Admittance vs. Drain Current
Static Drain to Source On State Resistance RDS(on) (m)
30
VGS = -6 V
ID = -20 A -10 A, -5 A
20 -10 V 10 -50 -25 0 25
50
75 100 125 150
0.1 -0.1
VDS = -10 V Pulse Test -1 -10 -100
Case Temperature Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverse Recovery Time
1000
Switching Characteristics
100 VGS = -10 V, VDD = -30 V PW = 300 s, duty 1 %
Reverse Recovery Time trr (ns)
Switching Time t (s)
td(on) 10
tr
100
td(off)
10 -0.1
di / dt = 50 A /s VGS = 0, Ta = 25C -1 -10 -100
tf 1 -0.1 -1 -10 -100
Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage
10000
Drain Current ID (A) Reverse Drain Current vs. Source to Drain Voltage
-40
Reverse Drain Current IDR (A)
VGS = 0 f = 1 MHz
Pulse Test -30 -10 V -20 -5 V -10 VGS = 0 V 0 -0.5 -1.0 -1.5
Capacitance C (pF)
1000 Coss
100 -0
-10
-20
-30
-40
-50
-60
Drain to Source Voltage VDS (V)
Source to Drain Voltage VSD (V)
REJ03G1906-0200 Rev.2.00 Jun 29, 2010
Page 4 of 6
RJE0601JPE
Gate to Source Voltage vs. Shutdown Time of Load-Short Test
Preliminary
Shutdown Case Temperature vs. Gate to Source Voltage
Gate to Source Voltage VGS (V)
-12 -10 -8 -6 -4 -2 0 0.0001
Shutdown Case Temperature Tc (C)
200
180
160
VDD = -16 V
140 ID = -5 A dv/dt VGS 500 V/ms 0 -2 -4 -6 -8 -10
120 100
0.001
0.01
0.1
Shutdown Time of Load-Short Test Pw (S)
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5 0.2
0.1
0.1
ch - c(t) = s (t) x ch - c ch - c = 2.5C/W, Tc = 25C
PDM
0.02
0.01
1sh ot p
D=
PW T
PW T
ulse
0.01 0.00001
0.05
0.0001
0.001
0.01
0.1
1
10
Pulse Width PW (S) Switching Time Test Circuit
Vin Monitor D.U.T. RL VDD = -30 V Vout td(on) Vout Monitor Vin 10% 90% 90% 90%
Waveform
Vin -10 V
50
10% tr td(off)
10% tf
REJ03G1906-0200 Rev.2.00 Jun 29, 2010
Page 5 of 6
RJE0601JPE
Preliminary
Package Dimensions
Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
Ordering Information
Part No. RJE0601JPE-00-J3 Quantity 1000 pcs Taping Shipping Container
REJ03G1906-0200 Rev.2.00 Jun 29, 2010
1.7
1.3 0.15
7.8 6.6
Page 6 of 6
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) (Note 2) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Dusseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141
http://www.renesas.com
(c) 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0

▲Up To Search▲

Price & Availability of RJE0601JPE-00-J3

	To Download RJE0601JPE-00-J3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .